Chen Y. Y., Liu Y.*, Wu. Z. H., et al. Low Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistor with Aluminum Oxide Gate Insulator. Chinese Physics Letters. 2018, 35(4): 048502
点击次数:
是否译文:否
上一条: Liu Y., Wang L., Cai S. T., et al. Temperature Dependence of the Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors from 10 to 400 K. Chinese Physics Letters. 2018, 35(9): 098502
下一条: Liu Y., Liu K., Chen R., et al. Total-Ionizing-Dose Radiation Effects in the P-type Polycrystalline Silicon Thin Film Transistors. Chinese Physics Letters. 2017, 34(1): 018501