广东工业大学教师主页平台管理系统 Liu Yuan--Home-- Wang L., Liu Y.*, Geng K. W., et al. Degradation of I-V and Low Frequency Noise Characteristics under Negative Bias Illumination Stress in the InZnO Thin Film Transistors. Chinese Physics B. 2018, 27(6):068504

刘远

教授

Supervisor of Doctorate Candidates

Supervisor of Master's Candidates

Date of Birth:1984-11-26

Date of Employment:2018-07-06

School/Department:集成电路学院

Education Level:博士

Gender:Male

Degree:Doctor of Engineering

Status:On-the-job

Discipline:微电子学与固体电子学
电路与系统
控制理论与控制工程

Honors and Titles:

2017-05-15 广州市珠江科技新星

2019-02-15 IEEE Senior Member

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Wang L., Liu Y.*, Geng K. W., et al. Degradation of I-V and Low Frequency Noise Characteristics under Negative Bias Illumination Stress in the InZnO Thin Film Transistors. Chinese Physics B. 2018, 27(6):068504

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Pre One:Han C. Y., Liu Y.*, Liu Y. R., et al. Negative Gate Bias Stress Effects on Conduction and Low Frequency Noise Characteristics in Poly-Si Thin-Film Transistors. Chinese Physics B. 2019, 28(8): 088502 Next One:Liu Y., Chen H. B., Liu Y. R., et al. Low Frequency Noise and Radiation Response in the Partially Depleted SOI MOSFETs with Ion Implanted Buried Oxide. Chinese Physics B. 2015, 24(8): 088503.