DOI码：10.1109/EDSSC.2010.5713771

发表刊物：2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

摘要：Pentacene OTFTs with HfLaO or HfO2 as gate dielectric were fabricated. The dielectrics were prepared by sputtering method and then annealed in NH3 at 400 oC. The k value for the HfLaO and HfO2 films amounted to 12.3 and 11.8 respectively. Both of the OTFTs could operate with a supply voltage of -5 V. The mobility of the OTFT with HfLaO gate dielectric was 0.688 cm2/Vs, which was much higher than that of the OTFT with HfO2 gate dielectric. Moreover, the HfLaO-based OTFT obtained smaller sub-threshold swing, larger drive current and larger on/off current ratio than the HfO2-baesd OTFT. The superior performance of the HfLaO-based OTFT is due to its better interfacial characteristics between the dielectric and the organic semiconductor. SEM images revealed that the pentacene film on HfLaO was more uniform and its grains were larger. C-V measurement indicated that Au-pentacene-HfLaO-Si structure displayed less hysteresis than Au-pentacene-HfO2-Si structure.

第一作者：L. F. Deng, P. T. Lai, Q. B. Tao, H. W. Choi, W. B. Chen, C. M. Che, J. P. Xu, Y. R. Liu

论文类型：论文集

是否译文：否

发表时间：2011-02-14