广东工业大学教师主页平台管理系统 Liu Yuan--Home-- Chen Y. Q., Liu X., Liu Y.*, et al. Hydrogen-dependent low frequency noise and its physical mechanism of HfO2 resistance change random access memory. Applied Physics Letters. 2017, 111(23): 232104

刘远

教授

Supervisor of Doctorate Candidates

Supervisor of Master's Candidates

Date of Birth:1984-11-26

Date of Employment:2018-07-06

School/Department:集成电路学院

Gender:Male

Degree:Doctor of Engineering

Status:On-the-job

Discipline:微电子学与固体电子学
电路与系统
控制理论与控制工程

Honors and Titles:

2017-05-15 广州市珠江科技新星

2019-02-15 IEEE Senior Member

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Chen Y. Q., Liu X., Liu Y.*, et al. Hydrogen-dependent low frequency noise and its physical mechanism of HfO2 resistance change random access memory. Applied Physics Letters. 2017, 111(23): 232104

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Pre One:Liu Y., Chen R. S., Li B., et al. Analysis of Indium Zinc Oxide Thin Film Transistors under Electrostatic Discharge Stress. IEEE Transaction on Electron Device. 2018, 65(1): 356-360 Next One:Liu Y., Huang Y. X., Deng S. B., et al. Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors. IEEE Journal of the Electron Devices Society. 2020, 8: 435-441